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bga622 silicon germanium wide band low noise amplifier with 2 kv esd protection data sheet, rev. 2.2, april 2008 small signal discretes
edition 2008-04-14 published by infineon technologies ag, 81726 mnchen, germany ? infineon technologies ag 2008. all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
bga622 data sheet 3 rev. 2.2, 2008-04-14 trademarks sieget ? is a registered trademark of infineon technologies ag. bga622, silicon germanium wide band low no ise amplifier with 2 kv esd protection revision history: 2008-04-14, rev. 2.2 previous version: 2005-11-16 page subjects (major changes since last revision) all document layout change
data sheet 4 rev. 2.2, 2008-04-14 bga622 silicon germanium wide band low noise amplifier with 2 kv esd protection 1 silicon germanium wide band low noise amplifier with 2 kv esd protection figure 1 pin connection description the bga622 is a wide band low noise amplifier, based on infineon technologies? silicon germanium technology b7hf. in order to provide the lna in a small package the out-pin is simultaneously used for rf out and on/off switch. this functionality can be accessed using a rf-choke at the out pin, where a dc level of 0 v or an open switches the device on and a dc level of v cc switches the device off. while the device is switched off, it provides an insertion loss of 24 db together with a high iip 3 up to 20 dbm. note: esd: electrostatic discharge sensitive device, observe handling precaution feature ? high gain | s 21 | 2 = 15.0 db at 1.575 ghz | s 21 | 2 = 14.2 db at 1.9 ghz | s 21 | 2 = 13.6 db at 2.14 ghz ? low noise figure, nf = 1.0 db at 1.575 ghz ? operating frequency range 0.5 - 6 ghz ? typical supply voltage: 2.75 v ? on/off-switch ? output-match on chip, input pre-matched ? low part count ?70ghz f t - silicon germanium technology ? 2 kv hbm esd protection (pin-to-pin) ? pb-free (rohs compliant) package sot343 applications ? lna for gsm, gps, dcs, pcs, umts, bluethooth, ism and wlan type package marking bga622 sot343 bxs 1 2 3 4 %*$b3lqbfrqqhfwlrqyvg 9ff 2xw *1' ,q 2q2ii n2kp
bga622 silicon germanium wide band low noise amplifier with 2 kv esd protection data sheet 5 rev. 2.2, 2008-04-14 maximum ratings note: all voltages refer to gnd-node thermal resistance table 1 maximum ratings parameter symbol limit value unit voltage at pin v cc v cc 3.5 v voltage at pin out v out 4v current into pin in i in 0.1 ma current into pin out i out 1ma current into pin v cc i vcc 10 ma rf input power p in 6dbm total power dissipation, t s < 139 c 1) 1) t s is measured on the ground lead at the soldering point p tot 35 mw junction temperature t j 150 c ambient temperature range t a -65... 150 c storage temperature range t stg -65... 150 c esd capability all pins (hbm: jesd22-a114) v esd 2000 v table 2 thermal resistance parameter symbol value unit junction - soldering point 1) 1) for calculation of r thja please refer to application note thermal resistance r thjs 300 k/w
data sheet 6 rev. 2.2, 2008-04-14 bga622 electrical characteristics 2 electrical characteristics 2.1 electrical characteristics at t a = 25 c (measured according to figure 2 ) v cc = 2.75 v, frequency = 1.575 ghz, unless otherwise specified table 3 electrical characteristics parameter symbol values unit note / test condition min. typ. max. insertion power gain |s 21 | 2 15.0 db insertion power gain (off-state) |s 21 | 2 -27 db input return loss (on-state) rl in 5db output return loss (on-state) rl out 12 db noise figure ( z s = 50 ?) f 50 ? 1.00 db f = 0.1 ghz input third order intercept point 1) (on-state) 1) ip 3 values depends on termination of all intermodulation frequency components. termination used for this measurement is 50 ? from 0.1 to 6 ghz iip 3 0dbm ? f =1mhz, p in = -28 dbm input third order intercept point 1) (off - state) iip 3 20 dbm ? f =1mhz, p in =-8dbm input power at 1 db gain compression p -1db -16.5 dbm total device off current i tot-off 130 260 420 a v cc = 2.75 v, v out = v cc total device on current i tot-on 4.0 5.8 7.8 ma v cc = 2.75 v on / off switch control voltage v on 00.8v v cc = 2.75 v on-mode: v out = v on v off 2.0 3.5 v v cc = 2.75 v off-mode: v out = v off
bga622 electrical characteristics data sheet 7 rev. 2.2, 2008-04-14 2.2 electrical characteristics at t a = 25 c (measured according to figure 2 ) v cc = 2.75 v, frequency = 2.14 ghz, unless otherwise specified figure 2 s-parameter test circuit (loss-free microstrip test-fixture) table 4 electrical characteristics parameter symbol values unit note / test condition min. typ. max. insertion power gain |s 21 | 2 13.6 db insertion power gain (off-state) |s 21 | 2 -24 db input return loss (on-state) rl in 7db output return loss (on-state) rl out 10 db noise figure ( z s = 50 ?) f 50 ? 1.05 db input third order intercept point 1) (on-state) 1) ip 3 values depends on termination of all intermodulation frequency components. termination used for this measurement is 50 ? from 0.1 to 6 ghz iip 3 3dbm ? f =1mhz, p in = -28 dbm input third order intercept point 1) (off-state) iip 3 20 dbm ? f =1mhz, p in =-8dbm input power at 1 db gain compression p -1db -13 dbm bga622_s_parameter_circuit.vsd dc, 2.75v 150pf out, 50 ? in, 50 ?
data sheet 8 rev. 2.2, 2008-04-14 bga622 electrical characteristics figure 3 application circuit for 1800 - 2500 mhz bga622_application_circuit.vsd dc, 2.75v 150pf out in 2.2nh (for improved input match) 47pf (dc-block) dc, 2.75v rfc on/off switch 47pf (dc-block)
bga622 measured parameters data sheet 9 rev. 2.2, 2008-04-14 3 measured parameters power gain |s 21 | 2 , g ma = f(f) v cc = 2.75v, i tot?on = 5.8ma 0 1 2 3 4 5 6 0 5 10 15 20 25 frequency [ghz] |s 21 | 2 , g ma [db] |s 21 | 2 g ma off gain |s 21 | 2 = f(f) v cc = 2.75v, v out = 2.75v, i tot?off = 0.3m a 0 1 2 3 4 5 6 ?45 ?40 ?35 ?30 ?25 ?20 ?15 ?10 ?5 0 frequency [ghz] |s 21 | 2 [db] reverse isolation |s 12 | = f(f) v cc = 2.75v, i tot?on = 5.8ma 0 1 2 3 4 5 6 ?45 ?40 ?35 ?30 ?25 ?20 ?15 ?10 ?5 0 frequency [ghz] |s 12 | [db] matching |s 11 |, |s 22 | = f(f) v cc = 2.75v, i tot?on = 5.8ma 0 1 2 3 4 5 6 ?20 ?18 ?16 ?14 ?12 ?10 ?8 ?6 ?4 ?2 0 frequency [ghz] |s 11 |, |s 22 | [db] s 11 s 22
data sheet 10 rev. 2.2, 2008-04-14 bga622 measured parameters stability k, b 1 = f(f) v cc = 2.75v, i tot?on = 5.8ma 0 1 2 3 4 5 6 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 frequency [ghz] k, b 1 k b1 noise figure f = f(f) v cc = 2.75v, i tot?on = 5.8ma, z s = 50 ? 0 0.5 1 1.5 2 2.5 3 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 frequency [ghz] f [db] input compression point p ?1db = f(v cc ) f = 2.14ghz, t a = parameter in c 2.6 2.8 3 3.2 3.4 ?14 ?13.5 ?13 ?12.5 ?12 ?11.5 ?11 ?10.5 v cc [v] p ?1db [dbm] 85 20 ?40 device current i tot?on = f(t a , v cc ) v cc = parameter in v ?40 ?20 0 20 40 60 80 5 5.5 6 6.5 7 7.5 8 8.5 t a [c] i tot?on [ma] 2.6 2.8 3 3.2 3.4
bga622 measured parameters data sheet 11 rev. 2.2, 2008-04-14 device current i tot?on = f(v cc , t a ) t a = parameter in c 2.6 2.8 3 3.2 3.4 5 5.5 6 6.5 7 7.5 8 8.5 v cc [v] i tot?on [ma] ?40 20 85 power gain |s 21 | 2 = f(t a , v cc ) f = 2.14ghz, v cc = parameter in v ?40 ?20 0 20 40 60 80 12.5 13 13.5 14 14.5 15 t a [c] |s 21 | 2 [db] 2.6 3 3.4 power gain |s 21 | 2 = f(v cc , t a ) f = 2.14ghz, t a = parameter in c 2.6 2.8 3 3.2 3.4 12.5 13 13.5 14 14.5 15 15.5 v cc [v] |s 21 | 2 [db] ?40 20 85
data sheet 12 rev. 2.2, 2008-04-14 bga622 package information 4 package information figure 4 package outline sot343 figure 5 tape for sot343 gps05605 1.25 0.1 0.1 max 2.1 0.1 0.15 +0.1 -0.05 0.3 +0.1 0.1 1.3 2 0.2 b 0.1 0.9 12 3 4 a +0.1 0.6 acc. to +0.2 din 6784 a m 0.20 0.20 m b 0.2 4 2.15 8 2.3 1.1 pin 1

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